sur6080 thru sur60120 sur6080 v rsm v 800 v rrm v 800 symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =60 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 100 60 800 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 500 540 450 480 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 1250 1200 1000 950 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 189 0.8...1.2 6 w nm weight g dimensions to-247ac a=anode, c=cathode, tab=cathode c a dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 SUR60100 1000 1000 sur60120 1200 1200 soft recovery behaviour ultra fast recovery epitaxial diodes c a c(tab) p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sur6080 thru sur60120 advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-247ac * glass passivatd chips * very short recovery time * extremely low switching losses * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 3 0.5 14 ma i r i f =60a; t vj =150 o c t vj =25 o c 1.8 2.3 v v f r thjc r thck r thja 0.66 35 k/w 0.25 v r =540v; i f =60a; -di f /dt=480a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=200a/us; v r =30v; t vj =25 o c ns i rm a 35 v to for power-loss calculations only 1.43 v r t 6.1 m t vj =t vjm 50 32 _ 36 soft recovery behaviour ultra fast recovery epitaxial diodes * rohs compliant p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sur6080 thru sur60120 f ig. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward voltage junction temperature. vers us di f /dt. f ig. 7 t rans ient thermal impedance junction to cas e. soft recovery behaviour ultra fast recovery epitaxial diodes p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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